Description
Product Overview
Onsemi MMUN2233LT1G Digital Transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features of Onsemi MMUN2233LT1G Digital Transistors
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Specifications
- Make : Onsemi
- DC Current Gain (hFE@Ic,Vce) : 80@5mA,10V
- Transistor Type : 1 NPN – Pre Biased
- Power Dissipation (Pd) : 246mW
- Collector Current (Ic) : 100mA
- Collector-Emitter Breakdown Voltage (Vceo) : 50V
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