Description
Product Overview
BD140 PNP Epitaxial Silicon Transistor TO-126 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.PNP transistors have three layers of semiconductor material: emitter, base, and collector.
When using the BD140 transistor in a circuit, it’s important to refer to the datasheet provided by the manufacturer for detailed specifications and operating characteristics, as specific values may vary depending on the manufacturer and production batch. Additionally, be sure to observe proper handling and heat dissipation guidelines to ensure reliable operation and prevent overheating.
BD140 transistors are often used in low- to medium-power amplification circuits also it can be used as switches to control higher-power devices or loads.
Features of BD140
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
Specifications of BD140 PNP Epitaxial Silicon Transistor TO-126
| Transistor Polarity | PNP |
| Collector−Emitter Voltage (VCEO) | 80V |
| Collector−Base Voltage (VCBO) | 80V |
| Continuous Collector Current (Ic) | 1.5A |
| Continuous Base Current (Ib) | 0.5A |
| DC Current Gain (hFE) | 40-250 |
| Operating Temperature Range | -65 – 150°C |
| Power Dissipation (Pd) | 12.5W |
| Thermal Resistance (ΘJA) | 100°C/W |
| Thermal Resistance (ΘJC) | 10°C/W |
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