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JSMSEMI MMBT5551 Bipolar Transistors

₹75.00 Incl. GST

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SKU: LC-46 x 100 Pcs Category: Tag:
Description

Description

Product Overview

JSMSEMI MMBT5551 Bipolar Transistors

Features of JSMSEMI MMBT5551 Bipolar Transistors

  • Epitaxial planar die construction.

Specifications of JSMSEMI MMBT5551 Bipolar Transistors

  • Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
  • Collector Cut-Off Current (Icbo) : 50nA
  • Collector-Emitter Breakdown Voltage (Vceo) : 160V
  • Power Dissipation (Pd) : 250mW
  • DC Current Gain (hFE@Ic,Vce) : 80@10mA,5V
  • Collector Current (Ic) : 600mA
  • Transition Frequency (fT) : 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) : 200mV@50mA,5mA
  • Operating Temperature :  -55℃~+150℃@(Tj)

 Download Datasheet

For more info click here

Package Includes: MMBT5551 x 100 Pcs

Additional information

Additional information

Weight

0.1 kg
Dimensions

5 × 10 × 5 cm
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