The BC108 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
- Collector emitter voltage (Vce) of 25V.
- Continuous collector current (Ic) of 200mA.
- Power dissipation of 600mW.
- Operating junction temperature range from -65 C to 200 C.
- Collector emitter saturation voltage of 600mV at Ic=100mA.
- DC current gain of 40 at Ic=10 A.